Epitaxial (EPI) Silicon Wafer

Tlhaloso

Epitaxial Silicon Waferkapa EPI Silicon Wafer, ke sephaphatha sa kristale se semiconducting se kentsoeng holim'a kristale e bentšitsoeng holim'a silicon substrate ka kholo ea epitaxial.The epitaxial layer e ka 'na ea e-ba thepa e tšoanang le ea substrate ka homogeneous epitaxial kgolo, kapa lera eksotiske le itseng lakatsehang boleng ka heterogeneous epitaxial kgolo, e amohelang epitaxial kgolo thekenoloji kenyeletsa lik'hemik'hale mouoane deposition CVD, liquid phase epitaxy LPE, hammoho le molecular beam. epitaxy MBE ho fihlela boleng bo phahameng ka ho fetesisa ba sekoli se tlase le bohloeki bo botle ba bokaholimo.Li-Silicon Epitaxial Wafers li sebelisoa haholo ho hlahiseng lisebelisoa tse tsoetseng pele tsa semiconductor, li-ICs tse kopantsoeng haholo tsa semiconductor, lisebelisoa tsa discrete le tsa matla, tse sebelisoang hape bakeng sa element ea diode le transistor kapa substrate bakeng sa IC joalo ka mofuta oa bipolar, MOS le lisebelisoa tsa BiCMOS.Ho feta moo, li-wafers tsa silicon tsa epitaxial le filimi e teteaneng ea EPI li atisa ho sebelisoa ho microelectronics, photonics le photovoltaics application.

Phano

Epitaxial Silicon Wafers kapa EPI Silicon Wafer at Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 4, 5 le 6 inch (100mm, 125mm, 150mm bophara), ka orientation <100>, <111>, epilayer resistivity ea <1ohm -cm kapa ho fihlela ho 150ohm-cm, le botenya ba epilayer ea <1um kapa ho fihla ho 150um, ho khotsofatsa litlhoko tse fapaneng tsa ho qetela tsa phekolo ea etched kapa LTO, e pakiloeng ka cassette e nang le lebokose la lebokose ka ntle, kapa e le litlhaloso tse hlophisitsoeng ho rarolla tharollo e phethahetseng. .

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Tlhaloso ea Setsebi

Epi Silicon Wafer

Epitaxial Silicon Waferskapa EPI Silicon Wafer at Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 4, 5 le 6 inch (100mm, 125mm, 150mm bophara), ka orientation <100>, <111>, epilayer resistivity ea <1ohm-cm kapa ho fihlela ho 150ohm-cm, le botenya ba epilayer ea <1um kapa ho fihla ho 150um, ho khotsofatsa litlhoko tse fapaneng tsa ho qetela tsa phekolo e entsoeng kapa ea LTO, e pakiloeng ka cassette e nang le lebokose la lebokose ka ntle, kapa e le litlhaloso tse hlophisitsoeng ho rarolla tharollo e phethahetseng.

Letšoao	Si
Nomoro ea Atomic	14
Boima ba Atomic	28.09
Sehlopha sa Element	Metalloid
Sehlopha, Nako, Thibela	14, 3, P
Sebopeho sa kristale	Taemane
Mmala	Boputsoa bo lefifi
Melting Point	1414°C, 1687.15 K
Ntlha e belang	3265°C, 3538.15 K
Boima ba 300K	2.329 g/cm³
Ho hanyetsa ka hare	3.2E5 Ω-cm
Nomoro ea CAS	7440-21-3
Nomoro ea EC	231-130-8

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Litšobotsi tse Akaretsang
1-1	Boholo	4"	5"	6"
1-2	Diameter mm	100±0.5	125±0.5	150±0.5
1-3	Boitloaelo	<100>, <111>	<100>, <111>	<100>, <111>
2	Litšobotsi tsa Epitaxial Layer
2-1	Mokhoa oa Kholo	CVD	CVD	CVD
2-2	Mofuta oa conductivity	P kapa P+, N/ kapa N+	P kapa P+, N/ kapa N+	P kapa P+, N/ kapa N+
2-3	Botenya μm	2.5-120	2.5-120	2.5-120
2-4	Botenya Uniformity	≤3%	≤3%	≤3%
2-5	Ho hanyetsa Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Resistivity Uniformity	≤3%	≤5%	-
2-7	Ho kheloha cm-2	<10	<10	<10
2-8	Boleng ba Sefahleho	Ha ho na chip, haze kapa lekhapetla la lamunu le setseng, joalo-joalo.
3	Tšoara Litšobotsi tsa Substrate
3-1	Mokhoa oa Kholo	CZ	CZ	CZ
3-2	Mofuta oa conductivity	P/N	P/N	P/N
3-3	Botenya μm	525-675	525-675	525-675
3-4	Thickness Uniformity max	3%	3%	3%
3-5	Ho hanyetsa Ω-cm	Joalo ka ha ho hlokahala	Joalo ka ha ho hlokahala	Joalo ka ha ho hlokahala
3-6	Resistivity Uniformity	5%	5%	5%
3-7	TTV μm max	10	10	10
3-8	Inamela μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Edge Profile	E pota-potiloe	E pota-potiloe	E pota-potiloe
3-12	Boleng ba Sefahleho	Ha ho na chip, haze kapa lekhapetla la lamunu le setseng, joalo-joalo.
3-13	Lehlakore la Morao Qetella	E ngotsoe kapa LTO (5000±500Å)
4	Ho paka	Cassette ka hare, lebokose la lebokose ka ntle.

Silicon Epitaxial Wafersli sebelisoa haholo ho hlahisoeng ha lisebelisoa tse tsoetseng pele tsa semiconductor, li-ICs tse kopantsoeng haholo tsa semiconductor, lisebelisoa tsa discrete le tsa matla, tse sebelisoang hape bakeng sa element ea diode le transistor kapa substrate bakeng sa IC joalo ka mofuta oa bipolar, MOS le lisebelisoa tsa BiCMOS.Ho feta moo, li-wafers tsa silicon tsa epitaxial le filimi e teteaneng ea EPI li atisa ho sebelisoa ho microelectronics, photonics le photovoltaics application.