Indium Phosphide InP

Tlhaloso

Indium Phosphide InP,CAS No.22398-80-7, melting point 1600 ° C, a binary compound semiconductor of III-V family, face-centered cubic "zinc blende" sebopeho sa kristale, se ts'oanang le boholo ba li-semiconductors tsa III-V, li entsoe ho tloha 6N 7N high purity indium le phosphorus element, mme e holisitsoe ho ba kristale e le 'ngoe ka mokhoa oa LEC kapa VGF.Kristale ea Indium Phosphide e entsoe hore e be mofuta oa n-type, p-type kapa semi-insulating conductivity bakeng sa tlhahiso e eketsehileng ea liphaephe ho fihla ho 6 ″ (150 mm) bophara, e nang le lekhalo la eona le tobileng la lihlopha, ho tsamaea ho phahameng ho phahameng ha lielektrone le masoba le mocheso o sebetsang hantle. conductivity.Indium Phosphide InP Wafer kereiti ea mantlha kapa ea tlhahlobo ho Western Minmetals (SC) Corporation e ka fanoa ka mofuta oa p, mofuta oa n le semi-insulating conductivity ka boholo ba 2" 3" 4" le 6" (ho fihla ho 150mm) bophara, orientation <111> kapa <100> le botenya ba 350-625um e nang le bokaholimo ba ts'ebetso e hlophisitsoeng le e bentšitsoeng kapa e lokiselitsoeng Epi.Ho sa le joalo Indium Phosphide Single Crystal ingot 2-6 ″ e fumaneha ha u e kopa.Polycrystalline Indium Phosphide InP kapa Multi-crystal InP ingot ka boholo ba D(60-75) x Length (180-400) mm ea 2.5-6.0kg e nang le concentration ea carrier e ka tlase ho 6E15 kapa 6E15-3E16 e fumaneha hape.Litlhaloso life kapa life tse ikhethileng tse fumanehang ka kopo ho fihlela tharollo e phethahetseng.

Lisebelisoa

Indium Phosphide InP wafer e sebelisoa haholo bakeng sa tlhahiso ea likarolo tsa optoelectronic, lisebelisoa tsa elektronike tse matla a phahameng le tse phahameng haholo, e le karoloana ea lisebelisoa tsa epitaxial indium-gallium-arsenide (InGaAs) tse thehiloeng ho opto-electronic.Indium Phosphide e boetse e le molemong oa ho etsa mehloli ea leseli e ts'episang haholo puisanong ea fiber optical, lisebelisoa tsa mohloli oa matla a microwave, li-amplifiers tsa microwave le lisebelisoa tsa liheke tsa FETs, li-modulator tse lebelo le li-photo-detectors, le ho tsamaisa sathelaete joalo-joalo.

Botsa hona joale

Lintlha

Li-tag

Tlhaloso ea Setsebi

Indium Phosphide InP

Crystal e le 'ngoe ea Indium PhosphideWafer (InP crystal ingot kapa Wafer) ho Western Minmetals (SC) Corporation e ka fanoa ka mofuta oa p, mofuta oa n le semi-insulating conductivity ka boholo ba 2" 3" 4" le 6" (ho fihla ho 150mm) bophara, orientation <111> kapa <100> le botenya ba 350-625um e nang le bokaholimo ba ts'ebetso e hlophisitsoeng le e bentšitsoeng kapa e lokiselitsoeng Epi.

Indium Phosphide Polycrystallinekapa Multi-Crystal ingot (InP poly ingot) ka boholo ba D(60-75) x L(180-400) mm ea 2.5-6.0kg e nang le concentration ea carrier e ka tlase ho 6E15 kapa 6E15-3E16 e fumaneha.Litlhaloso life kapa life tse ikhethileng tse fumanehang ka kopo ho fihlela tharollo e phethahetseng.

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Crystal e le 'ngoe ea Indium Phosphide	2"	3"	4"
2	Diameter mm	50.8±0.5	76.2±0.5	100±0.5
3	Mokhoa oa Kholo	VGF	VGF	VGF
4	Boikhantšo	P/Zn-doped, N/(S-doped kapa un-doped), Semi-insulating
5	Boitloaelo	(100)±0.5°, (111)±0.5°
6	Botenya μm	350±25	600±25	600±25
7	Orientation Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/Vs	50-70, >2000, (1.5-4)E3
10	Moemeli oa Concentration cm-3	(0.6-6)E18, ≤3E16
11	TTV μm max	10	10	10
12	Inamela μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	500	1000	2000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Ho paka	Sets'oants'o se le seng sa wafer se tiisitsoeng ka mokotleng oa aluminium composite.

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Ingot ea Indium Phosphide	Poly-Crystalline kapa Multi-Crystal Ingot
2	Boholo ba Crystal	D(60-75) x L(180-400)mm
3	Boima ka Crystal Ingot	2.5-6.0Kg
4	Motsamao	≥3500 cm²/VS
5	Boiketlo ba Mojari	≤6E15, kapa 6E15-3E16 cm^-3
6	Ho paka	E 'ngoe le e' ngoe ea kristale ea InP e ka mokotleng oa polasetiki o tiisitsoeng, li-ingots tse 2-3 ka lebokoseng le le leng la lebokose.

Linear Foromo	InP
Boima ba Molek'hule	145.79
Sebopeho sa kristale	Motsoako oa zinc
Ponahalo	Crystalline
Melting Point	1062°C
Ntlha e belang	N/A
Boima ba 300K	4.81 g/cm³
Lekhalo la Matla	1.344 eV
Ho hanyetsa ka hare	8.6E7 Ω-cm
Nomoro ea CAS	22398-80-7
Nomoro ea EC	244-959-5

Sephaephe sa Indium Phosphide InPe sebelisoa haholo bakeng sa tlhahiso ea lisebelisoa tsa optoelectronic, lisebelisoa tsa elektronike tse matla le tse phahameng haholo, e le substrate ea epitaxial indium-gallium-arsenide (InGaAs) e thehiloeng lisebelisoa tsa opto-electronic.Indium Phosphide e boetse e le molemong oa ho etsa mehloli ea leseli e ts'episang haholo puisanong ea fiber optical, lisebelisoa tsa mohloli oa matla a microwave, li-amplifiers tsa microwave le lisebelisoa tsa liheke tsa FETs, li-modulator tse lebelo le li-photo-detectors, le ho tsamaisa sathelaete joalo-joalo.