Single Crystal Germanium Wafer / Ingot Featured Image

Crystal Germannium Wafer e le 'ngoe / Ingot

Tlhaloso

Crystal e le 'ngoe ea Crystal Germanium Wafer/Ingotkapa monocrystalline germanium ke ponahalo ea 'mala o moputsoa oa silevera, ntlha e qhibilihang ke 937°C, boima ba 5.33 g/cm.³.Crystalline germanium e brittle mme e na le polasetiki e nyane mochesong oa kamore.High purity germanium e fumanoa ka ho phaphamala ha libaka le ho kenngoa ka indium le gallium kapa antimony ho fumana conductivity ea mofuta oa n kapa p, e nang le motsamao o phahameng oa elektronike le motsamao o phahameng oa lesoba, 'me e ka futhumatsoa ka motlakase bakeng sa anti-fogging kapa anti-icing. lits'ebetso.Single Crystal Germanium e holisitsoe ke theknoloji ea Vertical Gradient Freeze VGF ho netefatsa hore e tsitsitse lik'hemik'hale, ho hanyetsa kutu, phetisetso e ntle, index e phahameng haholo ea refractive le boemo bo phahameng ba lattice.

Lisebelisoa

Crystal Germanium e le 'ngoe e fumana lits'ebetso tse ts'episang le tse pharaletseng, tseo ho tsona ho sebelisoang maemo a elektroniki bakeng sa diode le li-transistors, Infrared kapa optical grade germanium e se nang letho kapa fensetere ke ea fensetere ea IR optical kapa disks, likarolo tsa optical tse sebelisoang ponong ea bosiu le tharollo ea litšoantšo tsa thermographic bakeng sa ts'ireletso, tekanyo ea mocheso o hole, ho loantša mollo le lisebelisoa tsa ho shebella indasteri, P le N mofuta oa Germannium wafer o ka sebelisoa hape bakeng sa liteko tsa Hall effect.Cell grade ke ea substrates e sebelisoang ho III-V triple-junction ea lisele tsa letsatsi le tsa motlakase Concentrated PV systems tsa solar cell jj.

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Lintlha

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Tlhaloso ea Setsebi

Crystal Germanium e le 'ngoe

Crystal Germannium Wafer e le 'ngoe kapa Ingote nang le mofuta oa n-type, p-type le un-doped conductivity and orientation <100> at Western Minmetals (SC) Corporation e ka tsamaisoa ka boholo ba 2, 3, 4 le 6 inch diameter (50mm, 75mm, 100mm le 150mm) le ka holim'a sekontiri se entsoeng ka holim'a sekontiri kapa se bentšitsoeng ka har'a lebokose la foam kapa cassette bakeng sa sephaphatha le ka mokotleng oa polasetiki o tiisitsoeng bakeng sa engot e nang le lebokose la lebokose ka ntle, polycrystalline germanium ingot e fumaneha hape ha e kopa, kapa ka mokhoa o hlophisitsoeng ho finyella tharollo e phethahetseng.

Letšoao	Ge
Nomoro ea Atomic	32
Boima ba Atomic	72.63
Sehlopha sa Element	Metalloid
Sehlopha, Nako, Thibela	14, 4, P
Sebopeho sa kristale	Taemane
Mmala	Bosoeu bo boputsoa
Melting Point	937°C, 1211.40K
Ntlha e belang	2833°C, 3106K
Boima ba 300K	5.323 g/cm³
Ho hanyetsa ka hare	46 Ω-cm
Nomoro ea CAS	7440-56-4
Nomoro ea EC	231-164-3

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Sekhahla sa Jeremane	2"	3"	4"	6"
2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Mokhoa oa Kholo	VGF kapa CZ	VGF kapa CZ	VGF kapa CZ	VGF kapa CZ
4	Boikhantšo	Mofuta oa P / o kentsoeng (Ga kapa In), N-type/ Sb e otlolohileng, e sa kengoang
5	Boitloaelo	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Botenya μm	145, 175, (500-1000)
7	Ho hanyetsa Ω-cm	0.001-50	0.001-50	0.001-50	0.001-50
8	Mobility cm2/Vs	>200	>200	>200	>200
9	TTV μm max	5, 8, 10	5, 8, 10	5, 8, 10	5, 8, 10
10	Inamela μm max	15	15	15	15
11	Warp μm max	15	15	15	15
12	Dislocation cm-2 max	300	300	300	300
13	EPD cm-2	<4000	<4000	<4000	<4000
14	Karolo e bala boholo ba a/wafer	10 (ho ≥0.5μm)	10 (ho ≥0.5μm)	10 (ho ≥0.5μm)	10 (ho ≥0.5μm)
15	Surface Finish	P/E, P/P kapa ha ho hlokahala
16	Ho paka	Setshelo se le seng sa wafer kapa cassette kahare, lebokose la lebokose ka ntle

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Jeremane Ingot	2"	3"	4"	6"
2	Mofuta	P-type / doped (Ga, In), N-type/ doped (As, Sb), Un-doped
3	Ho hanyetsa Ω-cm	0.1-50	0.1-50	0.1-50	0.1-50
4	Carrier Lifetime μs	80-600	80-600	80-600	80-600
5	Ingot Length mm	140-300	140-300	140-300	140-300
6	Ho paka	E tiisitsoe ka mokotleng oa polasetiki kapa lebokose la foam ka hare, lebokose la lebokose le ka ntle
7	Ela hloko	Polycrystalline germanium ingot e fumaneha ka kopo

Crystal Germanium e le 'ngoee fumana lits'ebetso tse ts'episang le tse pharaletseng, tseo ho tsona ho sebelisoang maemo a elektroniki bakeng sa diode le li-transistors, Infrared kapa optical grade germanium e se nang letho kapa fensetere ke ea fensetere ea IR optical kapa disks, likarolo tsa optical tse sebelisoang ponong ea bosiu le tharollo ea litšoantšo tsa thermographic bakeng sa ts'ireletso, tekanyo ea mocheso o hole, ho loantša mollo le lisebelisoa tsa ho shebella indasteri, P le N mofuta oa Germannium wafer o ka sebelisoa hape bakeng sa liteko tsa Hall effect.Cell grade ke ea substrates e sebelisoang ho III-V triple-junction ea lisele tsa letsatsi le tsa motlakase Concentrated PV systems tsa solar cell jj.