Gallium Nitride GaN

Tlhaloso

Gallium Nitride GaN, CAS 25617-97-4, boima ba limolek'hule 83.73, mohaho oa kristale oa wurtzite, ke motsoako oa binary o tobileng band-gap semiconductor ea sehlopha sa III-V se hōlileng ka mokhoa o tsoetseng pele oa ammonothermal process.E khetholloa ka boleng bo phethahetseng ba kristale, mocheso o phahameng oa mocheso, motsamao o phahameng oa elektronike, sebaka se phahameng sa motlakase oa bohlokoa le bandgap e pharaletseng, Gallium Nitride GaN e na le litšobotsi tse lakatsehang ho optoelectronics le lisebelisoa tsa ho utloa.

Lisebelisoa

Gallium Nitride GaN e loketse tlhahiso ea lisebelisoa tsa li-LED tsa lisebelisoa tsa laser le optoelectronics tse kang li-laser tse tala le tse putsoa, ​​lihlahisoa tse phahameng tsa electron mobility transistors (HEMTs) le ka matla a phahameng. le indasteri ea tlhahiso ea lisebelisoa tsa mocheso o phahameng.

Phano

Gallium Nitride GaN at Western Minmetals (SC) Corporation e ka fanoa ka boholo ba sephaphatha se chitja sa 2 inch ” kapa 4 ” (50mm, 100mm) le sekoere sephaphatha 10×10 kapa 10×5 mm.Boholo bofe kapa bofe bo hlophisitsoeng le litlhaloso ke tsa tharollo e phethahetseng ho bareki ba rona lefatšeng ka bophara.