Gallium Antimonide GaSb

Tlhaloso

Gallium Antimonide GaSb, semiconductor ea metsoako ea sehlopha sa III-V e nang le zinc-blende lattice structure, e entsoeng ka 6N 7N high purity gallium le lisebelisoa tsa antimone, 'me e hōlileng ho ea ho kristale ka mokhoa oa LEC ho tloha ka mokhoa o tsitsitseng oa polycrystalline ingot kapa mokhoa oa VGF ka EPD<1000cm.^-3.GaSb wafer e ka tšeloa ka har'a le ho etsoa ka mor'a moo ho tsoa ho engot e le 'ngoe ea kristale e nang le ts'ebetso e phahameng ea liparamente tsa motlakase, meaho e ikhethang le e sa fetoheng ea lattice, le density e tlase, index e phahameng ka ho fetisisa ea refractive ho feta metsoako e meng eo e seng ea tšepe.GaSb e ka sebetsoa ka khetho e pharaletseng ka mokhoa o nepahetseng kapa oa ho tima, ho tsepamisa mohopolo o tlase kapa o phahameng, pheletso e ntle ea bokaholimo le kholo ea MBE kapa MOCVD epitaxial.Gallium Antimonide substrate e ntse e sebelisoa lits'ebetsong tse tsoetseng pele ka ho fetesisa tsa photo-optic le optoelectronic joalo ka ha ho etsoa li-detectors tsa lifoto, li-detectors tsa infrared tse nang le bophelo bo bolelele, kutlo e phahameng le ho ts'epahala, karolo ea photoresist, li-LED le lasers, transistors, thermal photovoltaic cell. le mekhoa ea thermo-photovoltaic.

Phano

Gallium Antimonide GaSb at Western Minmetals (SC) Corporation e ka fanoa ka mofuta oa n-type, p-type le semi-insulating conductivity e sa tsitsang ka boholo ba 2" 3" le 4" (50mm, 75mm, 100mm) bophara, sebopeho <111> kapa <100>, 'me e na le li-wafer surface finishes tse sehiloeng, tse khabisitsoeng, tse bentšitsoeng kapa tsa boleng bo phahameng ba epitaxy.Lilae tsohle li ngotsoe ka laser ka bonngoe bakeng sa boitsebiso.Ho sa le joalo, polycrystalline gallium antimonide GaSb lump e boetse e hlophisitsoe ka kopo ho tharollo e phethahetseng.

Botsa hona joale

Lintlha

Li-tag

Tlhaloso ea Setsebi

Antimonide ea Gallium

GaSb

Gallium Antimonide GaSbsubstrate e ntse e sebelisoa lits'ebetsong tse tsoetseng pele ka ho fetesisa tsa photo-optic le optoelectronic joalo ka ha ho etsoa li-detectors tsa lifoto, li-detectors tsa infrared tse nang le bophelo bo bolelele, kutlo e phahameng le ho ts'epahala, karolo ea photoresist, li-LED tsa infrared le lasers, transistors, thermal photovoltaic cell le thermo. - tsamaiso ea photovoltaic.

	Lintho	Tlhaloso e Tloaelehileng
1	Boholo	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Mokhoa oa Kholo	LEC	LEC	LEC
4	Boikhantšo	P-type/Zn-doped, Un-doped, N-type/Te-doped
5	Boitloaelo	(100)±0.5°, (111)±0.5°
6	Botenya μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/Vs	200-3500 kapa ha ho hlokahala
10	Moemeli oa Concentration cm-3	(1-100)E17 kapa ha ho hlokahala
11	TTV μm max	15	15	15
12	Inamela μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	500	1000	2000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Ho paka	Setshelo se le seng sa wafer se tiisitsoeng ka mokotleng oa Aluminium.

Linear Foromo	GaSb
Boima ba Molek'hule	191.48
Sebopeho sa kristale	Motsoako oa zinc
Ponahalo	Grey crystalline solid
Melting Point	710°C
Ntlha e belang	N/A
Boima ba 300K	5.61 g/cm³
Lekhalo la Matla	0.726 eV
Ho hanyetsa ka hare	1E3 Ω-cm
Nomoro ea CAS	12064-03-8
Nomoro ea EC	235-058-8

Gallium Antimonide GaSbho Western Minmetals (SC) Corporation e ka fanoa ka mofuta oa n-type, p-type le undoped semi-insulating conductivity ka boholo ba 2" 3" le 4" (50mm, 75mm, 100mm) bophara, orientation <111> kapa <100 >, 'me e nang le li-wafer over finishes tse sehiloeng, tse betliloeng, tse bentšitsoeng kapa tsa boleng bo holimo tsa epitaxy.Lilae tsohle li ngotsoe ka laser ka bonngoe bakeng sa boitsebiso.Ho sa le joalo, polycrystalline gallium antimonide GaSb lump e boetse e hlophisitsoe ka kopo ho tharollo e phethahetseng.