Gallium Arsenide GaAs

Tlhaloso

Gallium ArsenideLi-GaAs ke a direct band gap compound semiconductor of group III-V synthesized by 6N 7N high purity gallium and arsenic element, and grown crystal by VGF or LEC process from high purity polycrystalline gallium arsenide, grey color appearance, cubic crystals with zinc-blende structure.Ka doping ea carbon, silicon, tellurium kapa zinc ho fumana mofuta oa n-type kapa p-type le semi-insulating conductivity ka ho latellana, kristale ea cylindrical InAs e ka aroloa 'me ea etsoa hore e be e se nang letho le e sehiloeng ka mokhoa o sehiloeng, o betliloeng, o bentšitsoeng kapa oa epi. -e loketse MBE kapa MOCVD kgolo ya epitaxial.Gallium Arsenide wafer e sebelisoa haholo ho etsa lisebelisoa tsa elektroniki tse kang infrared light-emitting diode, laser diode, optical windows, field-effect transistors FETs, linear of digital ICs le solar cell.Likarolo tsa li-GaAs li na le thuso ho maqhubu a seea-le-moea a phahameng haholo le ts'ebelisong ea switching ea elektroniki e potlakileng, lits'ebetso tsa ho holisa matšoao a fokolang.Ho feta moo, Gallium Arsenide substrate ke thepa e loketseng bakeng sa ho etsa likarolo tsa RF, maqhubu a microwave le monolithic ICs, le lisebelisoa tsa LED ka mekhoa ea puisano ea optical le tsamaiso bakeng sa ho tsamaea ha holo, matla a phahameng le botsitso ba mocheso.

Phano

Gallium Arsenide GaAs at Western Minmetals (SC) Corporation e ka fanoa e le letlapa la polycrystalline kapa sephaphatha sa kristale se le seng ka liphaephe tse khaotsoeng, tse betliloeng, tse betliloeng, kapa tse lokiselitsoeng epi ka boholo ba 2" 3" 4" le 6" (50mm, 75mm, 100mm, 150mm) bophara, ka mofuta oa p, mofuta oa n kapa semi-insulating conductivity, le <111> kapa <100> orientation.Tlhaloso e hlophisitsoeng ke ea tharollo e phethahetseng ho bareki ba rona lefatšeng ka bophara.

Botsa hona joale

Lintlha

Li-tag

Tlhaloso ea Setsebi

Gallium Arsenide

Li-GaAs

Gallium Arsenide GaAsli-wafers li sebelisoa haholo ho etsa lisebelisoa tsa elektroniki tse kang infrared light-emitting diode, laser diode, optical windows, field-effect transistors FETs, linear of digital ICs le solar cell.Likarolo tsa li-GaAs li na le thuso ho maqhubu a seea-le-moea a phahameng haholo le ts'ebelisong ea switching ea elektroniki e potlakileng, lits'ebetso tsa ho holisa matšoao a fokolang.Ho feta moo, Gallium Arsenide substrate ke thepa e loketseng bakeng sa ho etsa likarolo tsa RF, maqhubu a microwave le monolithic ICs, le lisebelisoa tsa LED ka mekhoa ea puisano ea optical le tsamaiso bakeng sa ho tsamaea ha holo, matla a phahameng le botsitso ba mocheso.

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Boholo	2"	3"	4"	6"
2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Mokhoa oa Kholo	VGF	VGF	VGF	VGF
4	Mofuta oa conductivity	N-Type/Si kapa Te-doped, P-Type/Zn-doped, Semi-Insulating/Un-doped
5	Boitloaelo	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Botenya μm	350±25	625±25	625±25	650±25
7	Orientation Flat mm	17±1	22±1	32±1	Notch
8	Identification Flat mm	7±1	12±1	18±1	-
9	Ho hanyetsa Ω-cm	(1-9)E(-3) bakeng sa mofuta oa p kapa oa n, (1-10)E8 bakeng sa semi-insulating
10	Mobility cm2/vs	50-120 bakeng sa mofuta oa p, (1-2.5)E3 bakeng sa mofuta oa n, ≥4000 bakeng sa semi-insulating
11	Moemeli oa Concentration cm-3	(5-50)E18 bakeng sa mofuta oa p, (0.8-4)E18 bakeng sa mofuta oa n
12	TTV μm max	10	10	10	10
13	Inamela μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	EPD cm-2	5000	5000	5000	5000
16	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Ho paka	Sets'oants'o se le seng sa wafer se tiisitsoeng ka mokotleng oa aluminium composite.
18	Litlhaloso	Mechinical grade GaAs wafer e fumaneha hape ha o e kopa.

Linear Foromo	Li-GaAs
Boima ba Molek'hule	144.64
Sebopeho sa kristale	Motsoako oa zinc
Ponahalo	Grey crystalline solid
Melting Point	1400°C, 2550°F
Ntlha e belang	N/A
Boima ba 300K	5.32 g/cm³
Lekhalo la Matla	1.424 eV
Ho hanyetsa ka hare	3.3E8 Ω-cm
Nomoro ea CAS	1303-00-0
Nomoro ea EC	215-114-8

Gallium Arsenide GaAsho Western Minmetals (SC) Corporation e ka fanoa e le hlama ea polycrystalline kapa sephaphatha sa kristale se le seng ka liphaephe tse sehiloeng, tse betliloeng, tse betliloeng, kapa tse lokiselitsoeng epi ka boholo ba 2"3" 4" le 6" (50mm, 75mm, 100mm. , 150mm) bophara, ka mofuta oa p, mofuta oa n kapa semi-insulating conductivity, le <111> kapa <100> orientation.Tlhaloso e hlophisitsoeng ke ea tharollo e phethahetseng ho bareki ba rona lefatšeng ka bophara.