Gallium Phosphide GaP

Tlhaloso

Gallium Phosphide GaP, semiconductor ea bohlokoa ea thepa e ikhethang ea motlakase e le lisebelisoa tse ling tsa III-V tse kopantsoeng, e phatsimang ka har'a sebopeho sa ZB sa thermodynamically stable, ke lisebelisoa tsa kristale tse mosehla oa lamunu tse nang le lekhalo le sa tobang la 2.26 eV (300K), e leng e entsoe ho tloha 6N 7N high purity gallium le phosphorus, 'me e hōlileng ka kristale e le' ngoe ka mokhoa oa Liquid Encapsulated Czochralski (LEC).Gallium Phosphide crystal e entsoe ka sebabole kapa tellurium ho fumana semiconductor ea mofuta oa n, 'me zinc e entsoe joalo ka mofuta oa p-mofuta bakeng sa ho tsoela pele ho etsoa ka sephaphatha se lakatsehang, se nang le lits'ebetso ho sistimi ea optical, lisebelisoa tsa elektroniki le lisebelisoa tse ling tsa optoelectronics.Single Crystal GaP wafer e ka lokisoa Epi-Ready bakeng sa ts'ebeliso ea hau ea LPE, MOCVD le MBE epitaxial.Mofuta o mong oa boleng bo phahameng ba kristale Gallium phosphide GaP wafer p-type, mofuta oa n kapa conductivity e sa tsitsang ho Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 2″ le 3" (50mm, 75mm bophara), mokhoa oa ho sheba <100>, <111 > e nang le bokaholimo ba ts'ebetso e sehiloeng, e bentšitsoeng kapa e lokiselitsoeng epi.

Lisebelisoa

Ka ts'ebetso e tlase ea hona joale le e phahameng ea ho ntša khanya, Gallium phosphide GaP wafer e loketse lisebelisoa tsa optical display e le li-diode tse theko e tlaase tse khubelu, tsa lamunu le tse tala (LED) le khanya e ka morao ea LCD e mosehla le e tala joalo-joalo le lisebelisoa tsa LED tse entsoeng ka lisebelisoa. Khanya e tlase ho isa ho e mahareng, GaP e boetse e amohetsoe ka bongata e le setsi sa mantlha sa li-sensor tsa infrared le tlhahiso ea lik'hamera tse behang leihlo.

Botsa hona joale

Lintlha

Li-tag

Tlhaloso ea Setsebi

Gallium Phosphide GaP

Sephaphatha sa boleng bo phahameng se le seng sa kristale Gallium Phosphide GaP kapa substrate p-type, mofuta oa n kapa conductivity e sa koaeloang ho Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 2 ″ le 3" (50mm, 75mm) bophara, sebopeho <100> , <111> e nang le bokaholimo ba sehiloeng, se phuthetsoe, se betliloeng, se bentšitsoeng, se lokiselitsoeng ka epi ka sejaneng se le seng sa liphaephe se tiisitsoeng ka mokotleng o kopantsoeng oa aluminium kapa ka mokhoa o ikhethileng ho fumana tharollo e phethahetseng.

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Boholo ba GaP	2"
2	Diameter mm	50.8 ± 0.5
3	Mokhoa oa Kholo	LEC
4	Mofuta oa conductivity	P-type/Zn-doped, N-type/(S, Si,Te)-doped, Un-doped
5	Boitloaelo	<1 1 1> ± 0.5°
6	Botenya μm	(300-400) ± 20
7	Ho hanyetsa Ω-cm	0.003-0.3
8	Oriental Flat (OF) mm	16±1
9	Identification Flat (IF) mm	8±1
10	Holo Mobility cm2/Vs min	100
11	Carrier Concentration cm^-3	(2-20) E17
12	Dislocation Density cm^-2max	2.00E+05
13	Surface Finish	P/E, P/P
14	Ho paka	Sets'oants'o se le seng sa wafer se tiisitsoeng ka mokotleng oa aluminium composite, lebokose la lebokose ka ntle

Linear Foromo	Lekhalo
Boima ba Molek'hule	100.7
Sebopeho sa kristale	Motsoako oa zinc
Ponahalo	Orange e tiileng
Melting Point	N/A
Ntlha e belang	N/A
Boima ba 300K	4.14 g/cm³
Lekhalo la Matla	2.26 eV
Ho hanyetsa ka hare	N/A
Nomoro ea CAS	12063-98-8
Nomoro ea EC	235-057-2

Gallium Phosphide GaP Wafer, e nang le ts'ebetso e tlase ea hona joale le e phahameng ea ho ntša leseli, e loketse lisebelisoa tsa optical display e le li-diode tse theko e tlaase tse khubelu, tsa lamunu le tse tala (LED) le backlight ea LCD e mosehla le e tala joalo-joalo le lisebelisoa tsa LED tse entsoeng ka tlaase ho ea bohareng. Khanya, GaP e boetse e amoheloa ka bongata e le setsi sa motheo bakeng sa li-sensor tsa infrared le tlhahiso ea lik'hamera tse behang leihlo.