Indium Antimonide InSb

Tlhaloso

Indium Antimonide InSb, semiconductor ea sehlopha sa III-V crystalline metsoako e nang le zinc-blende lattice structure, e entsoe ka 6N 7N high purity Indium le lisebelisoa tsa antimony, 'me e hōlileng kristale e le' ngoe ka mokhoa oa VGF kapa mokhoa oa Liquid Encapsulated Czochralski LEC ho tloha multiple zone refined polycrystalline ingot, e ka sejoang le ho etsoa sephaphatha le sekoahelo ka morao ho moo.InSb ke semiconductor ea phetoho e tobileng e nang le lekhalo le moqotetsane la 0.17eV mocheso oa kamore, kutloisiso e phahameng ho 1-5μm wavelength le Ultra high hall mobility.Indium Antimonide InSb n-type, p-type le semi-insulating conductivity at Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 1″ 2″ 3″ le 4” (30mm, 50mm, 75mm, 100mm) bophara, sebopeho < 111> kapa <100>, 'me e na le sekontiri se ka holimo sa sehiloeng, se phuthetsoe, se betliloeng le se bentšitsoeng.Indium Antimonide InSb target of Dia.50-80mm e nang le un-doped n-type e fumaneha hape.Ho sa le joalo, polycrystalline indium antimonide InSb (multicrystal InSb) e nang le boholo ba lesela le sa tloaelehang, kapa e se nang letho (15-40) x (40-80) mm, le bar e pota-potileng ea D30-80mm le eona e etsoa ka mokhoa o ikhethileng ha o kopa ho fumana tharollo e phethahetseng.

Kopo

Indium Antimonide InSb ke substrate e le 'ngoe e loketseng bakeng sa tlhahiso ea lisebelisoa tse ngata tsa morao-rao le lisebelisoa, tse kang tharollo e tsoetseng pele ea ho nahana ka mocheso, FLIR system, hall element le magnetoresistance effect element, infrared homing missile guide system, infrared photodetector sensor e arabelang haholo. , sensor e nepahetseng e phahameng ea makenete le ea rotary resistivity, focal planar arrays, hape e ikamahanya le maemo joalo ka mohloli oa mahlaseli a terahertz le sebonela-hōle sa linaleli sa sepakapaka jj.

Botsa hona joale

Lintlha

Li-tag

Tlhaloso ea Setsebi

Indium Antimonide

InSb

Indium Antimonide Substrate(InSb Substrate, InSb Wafer) n-type kapa p-type at Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 1" 2" 3" le 4" (30, 50, 75 le 100mm) bophara, orientation <111> kapa <100>, le e nang le liphaphatha tse pharalletseng, tse betliloeng, tse bentšitsoeng. Indium Antimonide Single Crystal bar (InSb Monocrystal bar) le eona e ka fanoa ha u e kopa.

Indium AntimonidePolycrystalline (InSb Polycrystalline, kapa multicrystal InSb) e nang le boholo ba leqeba le sa tloaelehang, kapa e se nang letho (15-40) x(40-80)mm le tsona li etsoa ka mokhoa o ikhethileng ha o kopa ho fumana tharollo e phethahetseng.

Ho sa le joalo, Indium Antimonide Target (InSb Target) ea Dia.50-80mm e nang le mofuta oa un-doped n-type e fumaneha hape.

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Indium Antimonide Substrate	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Mokhoa oa Kholo	LEC	LEC	LEC
4	Boikhantšo	P-type/Zn,Ge doped, N-type/Te-doped, Un-doped
5	Boitloaelo	(100)±0.5°, (111)±0.5°
6	Botenya μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/Vs	1-7E5 N/un-doped, 3E5-2E4 N/Te-doped, 8-0.6E3 kapa ≤8E13 P/Ge-doped
10	Moemeli oa Concentration cm-3	6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 kapa <1E14 P/Ge-doped
11	TTV μm max	15	15	15
12	Inamela μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	50	50	50
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Ho paka	Setshelo se le seng sa wafer se tiisitsoeng ka mokotleng oa Aluminium.

Che.	Lintho	Tlhaloso e Tloaelehileng
Che.	Lintho	Ike Antimonide Polycrystalline	Sepheo sa Indium Antimonide
1	Boikhantšo	E butsoe	E butsoe
2	Carrier Concentration cm^-3	6E13-3E14	1.9-2.1E16
3	Mobility cm²/Vs	5-7E5	6.9-7.9E4
4	Boholo	15-40x40-80 limilimithara	D(50-80) limilimithara
5	Ho paka	Ka mokotleng oa aluminium o kopantsoeng, lebokose la lebokose le ka ntle

Linear Foromo	InSb
Boima ba Molek'hule	236.58
Sebopeho sa kristale	Motsoako oa zinc
Ponahalo	Likristale tsa tšepe tse boputsoa bo lefifi
Melting Point	527 °C
Ntlha e belang	N/A
Boima ba 300K	5.78 g/cm³
Lekhalo la Matla	0.17 eV
Ho hanyetsa ka hare	4E(-3) Ω-cm
Nomoro ea CAS	1312-41-0
Nomoro ea EC	215-192-3

Indium Antimonide InSbwafer ke substrate e le 'ngoe e loketseng bakeng sa tlhahiso ea lisebelisoa tse ngata tsa morao-rao le lisebelisoa, tse kang tharollo e tsoetseng pele ea ho nahana ka mocheso, FLIR system, hall element le magnetoresistance effect element, infrared homing missile guide system, e arabelang haholo Infrared photodetector sensor, e phahameng. - sensor e nepahetseng ea makenete le ea rotary resistivity, focal planar arrays, hape e ikamahanya le maemo joalo ka mohloli oa mahlaseli a terahertz le sebonela-hōle sa linaleli sa sepakapaka jj.