Indium Arsenide InAs

Tlhaloso

Indium arsenide InAs crystal ke motsoako oa semiconductor oa sehlopha sa III-V se kopantsoeng ke bonyane 6N 7N pure Indium le Arsenic element le ho hōla kristale e le 'ngoe ka VGF kapa Liquid Encapsulated Czochralski ( LEC ) tshebetso, ponahalo ea 'mala o moputsoa, likristale tsa cubic tse nang le sebopeho sa zinc-blende. , sebaka se qhibilihang sa 942 °C.Indium arsenide band gap ke phetoho e tobileng e ts'oanang le gallium arsenide, 'me bophara bo hanetsoeng ke 0.45eV (300K).InAs kristale e na le ts'ebetso e phahameng ea liparamente tsa motlakase, lattice e sa khaotseng, ho tsamaea ka elektronike e phahameng le bokooa bo fokolang.kristale ea cylindrical InAs e hōlileng ka VGF kapa LEC e ka sejoa 'me ea etsoa ka sekontiri se sehiloeng, se betliloeng, se bentšitsoeng kapa se lokiselitsoe ka MBE kapa MOCVD epitaxial growth.

Lisebelisoa

Indium arsenide crystal wafer ke sebaka se setle sa ho etsa lisebelisoa tsa Holo le sensor ea matla a khoheli bakeng sa motsamao oa eona o phahameng ka ho fetesisa empa lekhalo le lesesaane la matla, sesebelisoa se loketseng kaho ea li-detectors tsa infrared tse nang le leqhubu la 1–3.8 µm tse sebelisoang lits'ebetsong tsa matla a holimo. mocheso oa kamore, hammoho le li-laser tse bohareng ba leqhubu la infrared super lattice, lisebelisoa tsa li-LED tsa bohareng ba infrared bakeng sa sebaka sa eona sa 2-14 μm sa wavelength.Ho feta moo, InAs ke sebaka se setle sa ho ts'ehetsa InGaAs, InAsSb, InAsPSb & InNAsSb kapa AlGaSb super lattice sebopeho joalo-joalo.

Botsa hona joale

Lintlha

Li-tag

Tlhaloso ea Setsebi

Indium arsenide

InAs

Indium Arsenide Crystal Waferke karoloana e ntle ea ho etsa lisebelisoa tsa Holo le sensor ea matla a khoheli bakeng sa motsamao oa eona o phahameng oa holo empa lekhalo le lesesaane la matla, sesebelisoa se loketseng kaho ea li-detectors tsa infrared tse nang le leqhubu la bolelele ba 1-3.8 µm tse sebelisoang lits'ebetsong tsa matla a holimo mochesong oa kamore, hammoho le li-laser tsa infrared super lattice tse bohareng ba maqhubu, lisebelisoa tsa li-LED tsa bohareng ba infrared bakeng sa sebaka sa eona sa 2-14 μm wavelength.Ho feta moo, InAs ke sebaka se setle sa ho ts'ehetsa InGaAs, InAsSb, InAsPSb & InNAsSb kapa AlGaSb super lattice sebopeho joalo-joalo.

Che.	Lintho	Tlhaloso e Tloaelehileng
1	Boholo	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Mokhoa oa Kholo	LEC	LEC	LEC
4	Boikhantšo	P-type/Zn-doped, N-type/S-doped, Un-doped
5	Boitloaelo	(100)±0.5°, (111)±0.5°
6	Botenya μm	500±25	600±25	800±25
7	Orientation Flat mm	16±2	22±2	32±2
8	Identification Flat mm	8±1	11±1	18±1
9	Mobility cm2/Vs	60-300, ≥2000 kapa ha ho hlokahala
10	Moemeli oa Concentration cm-3	(3-80)E17 kapa ≤5E16
11	TTV μm max	10	10	10
12	Inamela μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	1000	2000	5000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Ho paka	Setshelo se le seng sa wafer se tiisitsoeng ka mokotleng oa Aluminium.

Linear Foromo	InAs
Boima ba Molek'hule	189.74
Sebopeho sa kristale	Motsoako oa zinc
Ponahalo	Grey crystalline solid
Melting Point	(936-942)°C
Ntlha e belang	N/A
Boima ba 300K	5.67 g/cm³
Lekhalo la Matla	0.354 eV
Intrinsic Resistivity	0.16 Ω-cm
Nomoro ea CAS	1303-11-3
Nomoro ea EC	215-115-3

Indium Arsenide InAsho Western Minmetals (SC) Corporation e ka fanoa e le polycrystalline lump kapa kristale e le 'ngoe e sehiloeng, e betliloeng, e betliloeng, kapa e lokiselitsoeng epi ka boholo ba 2" 3" le 4" (50mm, 75mm,100mm) bophara, le p-mofuta, n-mofuta kapa un-doped conductivity le <111> kapa <100> orientation.Tlhaloso e hlophisitsoeng ke ea tharollo e phethahetseng ho bareki ba rona lefatšeng ka bophara.