Tlhaloso
Silicon Carbide Wafer SiC, e thata ka ho fetisisa, e entsoeng ka maiketsetso e entsoeng ka silicon le carbon ka mokhoa oa MOCVD, le lipontšo.lekhalo la eona le ikhethang la sehlopha se pharaletseng le litšobotsi tse ling tse ntle tsa katoloso e tlase ea mocheso, mocheso o phahameng oa ts'ebetso, ho felloa ke mocheso o motle, tahlehelo e tlase ea ho switjha le ho tsamaisa, ho sebetsa hantle haholo, ho sebetsa ka mocheso o phahameng le matla a matla a ho senyeha ha masimo a motlakase, hammoho le maqhubu a mangata. boemo.Silicon Carbide SiC at Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 2 ″ 3' 4" le 6 ″ (50mm, 75mm, 100mm, 150mm) bophara, ka mofuta oa n, semi-insulating kapa dummy wafer bakeng sa indasteri. le ts'ebeliso ea laboratori.Tlhaloso efe kapa efe e hlophisitsoeng ke ea tharollo e phethahetseng ho bareki ba rona lefatšeng ka bophara.
Lisebelisoa
Boleng bo phahameng ba 4H/6H Silicon Carbide SiC bafer e nepahetse bakeng sa ho etsa lisebelisoa tse ngata tsa elektroniki tse potlakileng, tse phahameng haholo le tse nang le matla a phahameng joalo ka Schottky diode & SBD, MOSFETs & JFETs, joalo-joalo. hape ke thepa e lakatsehang lipatlisisong le nts'etsopele ea li-insulated-gate bipolar transistors le thyristors.E le sesebelisoa se hlahelletseng sa semiconducting sa moloko o mocha, Silicon Carbide SiC wafer e boetse e sebetsa e le sesebelisoa se sebetsang hantle sa mocheso likarolong tse matla tsa LED, kapa e le setsi se tsitsitseng le se tsebahalang bakeng sa ho holisa GaN layer molemong oa boithuto ba mahlale ba nakong e tlang.
Tlhaloso ea Setsebi
Silicon Carbide SiCho Western Minmetals (SC) Corporation e ka fanoa ka boholo ba 2″ 3' 4“ le 6 ″ (50mm, 75mm, 100mm, 150mm) bophara, ka mofuta oa n, semi-insulating kapa dummy wafer bakeng sa ts'ebeliso ea indasteri le laboratori. .Tlhahiso efe kapa efe e hlophisitsoeng ke ea tharollo e phethahetseng ho bareki ba rona lefatšeng ka bophara.
Linear Foromo | SiC |
Boima ba Molek'hule | 40.1 |
Sebopeho sa kristale | Wurzite |
Ponahalo | Tiileng |
Melting Point | 3103±40K |
Ntlha e belang | N/A |
Boima ba 300K | 3.21 g/cm3 |
Lekhalo la Matla | (3.00-3.23) eV |
Ho hanyetsa ka hare | >1E5 Ω-cm |
Nomoro ea CAS | 409-21-2 |
Nomoro ea EC | 206-991-8 |
Che. | Lintho | Tlhaloso e Tloaelehileng | |||
1 | SiC boholo | 2" | 3" | 4" | 6" |
2 | Diameter mm | 50.8 0.38 | 76.2 0.38 | 100 0.5 | 150 0.5 |
3 | Mokhoa oa Kholo | MOCVD | MOCVD | MOCVD | MOCVD |
4 | Mofuta oa conductivity | 4H-N, 6H-N, 4H-SI, 6H-SI | |||
5 | Ho hanyetsa Ω-cm | 0.015-0.028;0.02-0.1;>1E5 | |||
6 | Boitloaelo | 0°±0.5°;4.0° ho ea ho <1120> | |||
7 | Botenya μm | 330±25 | 330±25 | (350-500)±25 | (350-500)±25 |
8 | Sebaka sa Mathomo a Flat | <1-100>±5° | <1-100>±5° | <1-100>±5° | <1-100>±5° |
9 | Bolelele ba Pele ba Botho ba mm | 16±1.7 | 22.2±3.2 | 32.5±2 | 47.5±2.5 |
10 | Sebaka sa Bobeli sa Flat | Silicon e shebane holimo: 90 °, ho ea ka nako ea oache ho tloha sephara se seholo ± 5.0 ° | |||
11 | Bolelele ba Bokhabane ba Bobeli mm | 8±1.7 | 11.2±1.5 | 18±2 | 22±2.5 |
12 | TTV μm max | 15 | 15 | 15 | 15 |
13 | Inamela μm max | 40 | 40 | 40 | 40 |
14 | Warp μm max | 60 | 60 | 60 | 60 |
15 | Kenyelletso ea moeli mm max | 1 | 2 | 3 | 3 |
16 | Micropipe Density cm-2 | <5, indasteri;<15, lab;<50, bohlanya | |||
17 | Dislocation cm-2 | <3000, indasteri;<20000, lab;<500000, dummy | |||
18 | Surface Roughness nm max | 1(E bentšitsoeng), 0.5 (CMP) | |||
19 | Mapetso | Ha ho letho, bakeng sa boemo ba indasteri | |||
20 | Lipoleiti tsa Hexagonal | Ha ho letho, bakeng sa boemo ba indasteri | |||
21 | Mengwapo | ≤3mm, bolelele bohle bo ka tlase ho bophara ba substrate | |||
22 | Li-Chips tsa Edge | Ha ho letho, bakeng sa boemo ba indasteri | |||
23 | Ho paka | Sets'oants'o se le seng sa wafer se tiisitsoeng ka mokotleng oa aluminium composite. |
Silicon Carbide SiC 4H/6Hsephaphatha sa boleng bo holimo se loketse ho etsoa ha lisebelisoa tse ngata tsa elektroniki tse potlakileng, tse phahameng haholo le tse nang le matla a phahameng joalo ka Schottky diode & SBD, MOSFETs & JFETs, joalo-joalo. Hape ke ntho e lakatsehang lipatlisiso le nts'etsopele ea li-insulated-gate bipolar transistors le thyristors.E le sesebelisoa se hlahelletseng sa semiconducting sa moloko o mocha, Silicon Carbide SiC wafer e boetse e sebetsa e le sesebelisoa se sebetsang hantle sa mocheso likarolong tse matla tsa LED, kapa e le setsi se tsitsitseng le se tsebahalang bakeng sa ho holisa GaN layer molemong oa boithuto ba mahlale ba nakong e tlang.
Malebela a Theko
Silicon Carbide SiC